1 semiconductors summary pnp? v ceo = -70v; r sat = 117m ; i c = -2.5a description packaged in the new innovative 2mm x 2mm mlp (micro leaded package) outline, this new 4th generation low saturation pnp transistor offers extremely low on state losses making it ideal for use in dc-dc circuits and various driving and power management functions. additionally users gain several other key benefits: performance capability equivalent to much larger packages improved circuit efficiency & power levels pcb area and device placement savings lower package height (0.9mm nom) reduced component count features ? low equivalent on resistance ? extremely low saturation voltage (-220mv max @1a) ? h fe specified up to 3a ? i c =2.5a continuous collector current ? 2mm x 2mm mlp applications ? dc - dc converters ? dc - dc modules ? power switches ? motor control device marking ? s4 ZXT4M322 issue 1 - june 2003 mpps tm miniature package power solutions 70v pnp low saturation transistor device reel size tape width quantity per reel zxtd4m322ta 7? 8mm 3000 zxtd4m322tc 13? 8mm 10000 ordering information underside view m l p 3 2 2 obsolete - please use zxtp722ma
ZXT4M322 semiconductors issue 1 - june 2003 2 parameter symbol v alue unit junction to ambient (a) r ja 83 c/w junction to ambient (b) r ja 51 c/w junction to ambient (d) r ja 125 c/w junction to ambient (e) r ja 42 c/w notes (a) for a single device surface mounted on 10 sq cm 1oz copper on fr4 pcb, in still air conditions with all exposed pads attached. (b) for a single device surface mounted on 10 sq cm 1oz copper on fr4 pcb, in still air conditions measured at t5 secs with all exposed pads attached. (c) repetitive rating - pulse width limited by max junction temperature. refer to transient thermal impedance graph. (d) for a single device surface mounted on 10 sq cm 1oz copper fr4 pcb, in still air conditions with minimal lead connections only. (e) for a single device surface mounted on 65 sq cm 2oz copper fr4 pcb, in still air conditions with all exposed pads attached. (f) the minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device, as shown in the package dimensions data. the thermal resistance for a device mounted on 1.5mm thick fr4 board using minimum copper of 1oz weight and 1mm wide tracks is rth= 300c/w giving a power rating of ptot=420mw thermal resistance parameter symbol limit unit collector-base voltage v cbo -70 v collector-emitter voltage v ceo -70 v emitter-base voltage v ebo -7.5 v peak pulse current i cm -3 a continuous collector current (a) i c -2.5 a base current i b -1000 ma power dissipation at ta=25c (a) linear derating factor p d 1.5 12 w mw/c power dissipation at ta=25c (b) linear derating factor p d 2.45 19.6 w mw/c power dissipation at ta=25c (d) linear derating factor p d 1 8 w mw/c power dissipation at ta=25c (e) linear derating factor p d 3 24 w mw/c operating & storage temperature range t j :t stg -55 to +150 c junction temperature t j 150 c absolute maximum ratings obsolete - please use zxtp722ma
ZXT4M322 semiconductors issue 1 - june 2003 3 typical characteristics obsolete - please use zxtp722ma
ZXT4M322 semiconductors issue 1 - june 2003 4 parameter symbol min. typ. max. unit c onditions collector-base breakdown voltage v (br)cbo -70 -150 v i c =-100 a collector-emitter breakdown voltage v (br)ceo -70 -125 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -7.5 -8.5 v i e =-100 a collector cut-off current i cbo -25 na v cb =-55v emitter cut-off current i ebo -25 na v eb =-6v collector emitter cut-off current i ces -25 na v ce =-55v collector-emitter saturation voltage v ce(sat) -35 -135 -140 -175 -50 -200 -220 -260 mv mv mv mv i c =-0.1a, i b =-10ma* i c =-0.5a, i b =-20ma* i c =-1a, i b =-100ma* i c =-1.5a, i b =-200ma* base-emitter saturation voltage v be(sat) -0.94 -1.05 v i c =-1.5a, i b =-200ma* base-emitter turn-on voltage v be(on) -0.78 -1.00 v i c =-1.5a, v ce =-5v* static forward current transfer ratio h fe 300 300 175 40 470 450 275 60 10 i c =-10ma, v ce =-5v* i c =-100ma, v ce =-5v* i c =-1a, v ce =-5v* i c =-1.5a, v ce =-5v* i c =-3a, v ce =-5v* transition frequency f t 150 180 mhz i c =-50ma, v ce =-10v f=100mhz output capacitance c obo 14 20 pf v cb =-10a, f=1mhz turn-on time t (on) 40 ns v cc =-50v, i c =-1a i b1 =i b2 =-50ma turn-off time t (off) 700 ns electrical characteristics (at t amb = 25c unless otherwise stated) *measured under pulsed conditions. pulse width=300s. duty cycle 2% obsolete - please use zxtp722ma
ZXT4M322 semiconductors issue 1 - june 2003 5 0.6 25c i c /i b =50 i c /i b =20 i c /i b =10 i c /i b =10 i c /i b =5 100c v ce =5v v ce =5v 25c -55c -55c 25c 100c -55c 25c 100c 0.5 0.4 0.3 0.2 0.1 0.0 1ma 10ma 100ma collector current v ce (volts) v be(sat) vs i c 1a 10a 0.6 0.5 0.4 0.3 0.2 0.1 0.0 1ma 10ma 100ma collector current v ce (volts) v ce(sat) vs i c 1a 10a i c /i b =5 100c 25c -55c 1.2 1.0 0.8 0.6 0.4 0.2 0.0 1ma 10ma 100ma collector current v be (volts) v be(sat) vs i c 1a 10a d.c. 1s 100ms 10ms 1ms 100s 10 single pulse test t amb = 25 deg c 1.0 0.1 0.01 0.1 1 10 v ce (volts) i c (amps) safe operating area 100 1.0 0.8 0.6 0.4 0.2 0.0 1ma 10ma 100ma collector current v be (volts) v be(on) vs i c 1a 10a 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.0 1ma 10ma 100ma collector current normalised gain typical gain (hfe) h fe(sat) vs i c 1a 10a 450 225 typical characteristics obsolete - please use zxtp722ma
ZXT4M322 semiconductors 6 issue 1 - june 2003 europe zetex plc fields new road chadderton oldham, ol9 8np united kingdom telephone (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com zetex gmbh streitfeldstra?e 19 d-81673 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial hwy hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia) ltd 3701-04 metroplaza tower 1 hing fong road kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com these offices are supported by agents and distributors in major countries world-wide. this publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. for the latest product information, log on to www.zetex.com ? zetex plc 2003 dim millimetres inches dim millimetres inches min max min max min max min max a 0.80 1.00 0.0315 0.0393 e 0.65 ref 0.0255 ref a1 0.00 0.05 0.00 0.002 e 2.00 bsc 0.0787 a2 0.65 0.75 0.0255 0.0295 e2 0.79 0.99 0.031 0.039 a3 0.15 0.25 0.0059 0.0098 e4 0.48 0.68 0.0188 0.0267 b 0.18 0.28 0.0070 0.0110 l 0.20 0.45 0.0078 0.0177 b1 0.17 0.30 0.0066 0.0118 l2 0.125 max. 0.005 ref d 2.00 bsc 0.0787 bsc r 0.075 bsc 0.0029 bsc d2 1.22 1.42 0.0480 0.0559 0 12 0 12 d4 0.56 0.76 0.0220 0.0299 package dimensions controlling dimensions are in millimetres. approximate conversions are given in inches package outline obsolete - please use zxtp722ma
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